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QS5K2
Transistors
Electrical characteristics curves
1000
Ta=25 ° C
f=1MHz
V GS =0V
1000
tf
Ta=25 ° C
V DD =15V
V GS =4.5V
R G =10 ?
Pulsed
6
Ta=25 ° C
V DD =15V
5 I D =2A
R G =10 ?
Pulsed
Ciss
100
4
100
10
td(off)
td(on)
3
2
Coss
tr
1
Crss
10
0.01
0.1
1
10
100
1
0.01
0.1
1
10
0
0
1
2
3
DRAIN-SOURCE VOLTAGE : V DS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
DRAIN CURRENT : I D (A)
Fig.2 Switching Characteristics
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
V DS =10V
Pulsed
300
Ta=25 ° C
Pulsed
10
V GS =0V
Pulsed
Ta=125 ° C
1
Ta=125 ° C
I D =2A
75 ° C
0.1
75 ° C
25 ° C
? 25 ° C
200
100
I D =1A
1
0.1
25 ° C
? 25 ° C
0.01
0.001
0.0
0.5
1.0
1.5
2.0
2.5
0
0
1
2
3
4
5
6
7
8
9
10
0.01
0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : V GS (V)
Fig.4 Typical Transfer Characteristics
GATE-SOURCE VOLTAGE : V GS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate source Voltage
SOURCE-DRAIN VOLTAGE : V SD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
1000
V GS =4.5V
1000
V GS =4.0V
1000
V GS =2.5V
100
10
Ta=125 ° C
75 ° C
25 ° C
? 25 ° C
Pulsed
100
10
Ta=125 ° C
75 ° C
25 ° C
? 25 ° C
Pulsed
100
10
Ta=125 ° C
75 ° C
25 ° C
? 25 ° C
Pulsed
0.1
1
10
0.1
1
10
0.1
1
10
DRAIN CURRENT : I D (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
DRAIN CURRENT : I D (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
DRAIN CURRENT : I D (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙΙ )
Rev.A
3/3
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